NPT1012

Gallium Nitride 28V, 25W RF Power Transistor

NPT1012

Gallium Nitride 28V, 25W RF Power Transistor

NPT1012_15

25W RF Power Transistor

NPT1012B

Next generation high power RF semiconductor technology

NPT1012B

包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 28V 25W DC-4000MHZ

MACOM Technology Solutions

NTE1012

IntegratedCircuitModule−Hybrid,27MHzOSCAMIF

IntegratedCircuitModule−Hybrid,27MHzOSCAMIF

NTHS-1012

NTCThermistors,SurfaceMountChip

FEATURES •Extendedresistancevaluesavailableinstandardsizes •WraparoundNibarrierterminationswith100Sn •Allowsdesignflexibilityforusewithhybrid  circuitry •High-densitymonolithicconstructionwithglassovercoat •Sn90Pb10platedterminationsversionavailable •Compli

P1012

single-anddual-corecommunicationsprocessors

FreescaleQorIQcommunicationsplatformsarethenext-generationevolutionofourleadingPowerQUICCcommunicationsprocessors.Builtusinghigh-performancePowerArchitecture®cores,QorIQplatformsenableaneweraofnetworkinginnovationwherethereliability,securityandqualityofservicef

P1012AP

Self-SuppliedMonolithicSwitcherforLowStandby-PowerOfflineSMPS

TheNCP101Xseriesintegratesafixed−frequencycurrent−mode controlleranda700VMOSFET.HousedinaPDIP−7orSOT−223 package,theNCP101Xofferseverythingneededtobuildaruggedand low−costpowersupply,includingsoft−start,frequencyjittering, short−circuitprotection,skip−cycle,

PBKAM1012

10WATTS-AC/DCPOWERMODULESINGLE-MULTIPLEOUTPUT