GaN on Si HEMT D-Mode Integrated Amplifier

文件：1.13358 Mbytes 页数：11 Pages

MA-COM

Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

MA-COM

GaN Amplifier 28 V, 5 W, 0.020 - 2.7 GHz

The NPA1008 is a wideband integrated GaN power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 x 4 mm 24-lead QFN plastic package. The NPA1008 is ideally suited for gene ·GaN on Si HEMT D-Mode Integrated Amplifier\n·100% RF Tested\n·45% Drain Efficiency\n·28 V Operation\n·50 O Input Matched\n·Wideband tuned from 20 - 2700 MHz\n·Suitable for linear and saturated applications\n·Halogen-Free “Green” Mold Compound\n·Lead-Free 4 x 4 mm 24-lead PQFN Package\n·RoHS;

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GaN on Si HEMT D-Mode Integrated Amplifier

文件：1.13358 Mbytes 页数：11 Pages

MA-COM

GaN Amplifier 28 V, 5 W, 20 - 2700 MHz

The NPA1008A is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 24-lead QFN plastic package. The NPA1008A is ideally suited for gen ·GaN on Si HEMT D-Mode Integrated Amplifier\n·100% RF Tested\n·45% Drain Efficiency\n·28 V Operation\n·50 Ω Input Matched\n·Broadband Operation from 20 - 2700 MHz\n·Suitable for linear and saturated applications\n·Lead-Free 4 x 4 mm 24-lead PQFN Package\n·RoHS* Compliant;

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包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR NPA1008

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