| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VHGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=3.2mΩMAX.(VGS=10V,ID=45A) •Lowinputcapacitance ⎯Ciss=5000pFTYP.(VDS=25V,VGS=0V) •Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VHGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=3.2mΩMAX.(VGS=10V,ID=45A) •Lowinputcapacitance ⎯Ciss=5000pFTYP.(VDS=25V,VGS=0V) •Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VHGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=3.2mΩMAX.(VGS=10V,ID=45A) •Lowinputcapacitance ⎯Ciss=5000pFTYP.(VDS=25V,VGS=0V) •Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel30V-0.005廓-80A-DPAK/IPAKSTripFET??IIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitableforthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesreduce | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
NP90N03
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
TO-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
Renesas |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
85600 |
正品授权货源可靠 |
询价 | |||
Renesas |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
原厂 |
2020+ |
TO-252 |
20000 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
RENESAS/瑞萨 |
TO-252 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
RENESAS/瑞萨 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS/瑞萨 |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 | ||
RENESAS/瑞萨 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-252 |
5000 |
原厂代理 终端免费提供样品 |
询价 |
相关规格书
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- NPA-500-M-015-A
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- NPA-500M-030A
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- NPAAS5DC3V
