首页 >NP34N055SHE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP34N055SHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) •LowCis | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
NP34N055SHE | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
NP34N055SHE | Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) •LowCis | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) •LowCis | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP34N055SHE
- 功能描述：
MOSFET N-CH 55V 34A TO-252
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
-
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
17+ |
TO-252 |
31518 |
原装正品 可含税交易 |
询价 | ||
NEC |
08+(pbfree) |
TO-252 |
8866 |
询价 | |||
NEC |
23+ |
TO-252 |
11740 |
全新原装 |
询价 | ||
Renesas |
19+ |
TO-252 |
87431 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
Renesas |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEC |
6000 |
面议 |
19 |
TO-252 |
询价 | ||
Renesas |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
R |
23+ |
TO-252 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
原厂 |
2020+ |
TO-252 |
20000 |
公司代理品牌,原装现货超低价清仓! |
询价 |
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