NP180N04TUJ规格书应用电路库存现货瑞萨-114ic电子网

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NP180N04TUJ	文件：220.58 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUJ-E1-AY	文件：220.58 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUJ-E2-AY	文件：220.58 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUK	文件：253.03 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUK	文件：759.7 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUK_V01	文件：759.7 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUK-E1-AY	文件：759.7 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUK-E1-AY	文件：253.03 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUK-E2-AY	文件：759.7 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N04TUK-E2-AY	文件：253.03 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUJ	文件：217.83 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUJ-E1-AY	文件：217.83 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUJ-E2-AY	文件：217.83 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUK	文件：111.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUK	文件：270.42 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUK_V01	文件：270.42 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUK-E1-AY	文件：270.42 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUK-E1-AY	文件：111.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUK-E2-AY	文件：270.42 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP180N055TUK-E2-AY	文件：111.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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详细参数

型号：
NP18
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
MOS FIELD EFFECT TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	NP180N04TUJ	NEC	23+	TO-263	37650	全新原装真实库存含13点增值税票!	询价
深圳市百视威讯电子科技有限公司	NP180N04TUJ		23+	N/A	30050	正品授权货源可靠	询价
深圳兆威电子有限公司	NP180N04TUJ	VB	2019	TO263	55000	绝对原装正品假一罚十!	询价
深圳市国宇半导体科技有限公司	NP180N04TUJ	NEC	23+	TO-263	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	NP180N04TUJ	NEC	23+	TO-263-7	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NP180N04TUJ	NEC	21+	TO-263-7	10000	原装现货假一罚十	询价
深圳廊盛科技有限公司	NP180N04TUJ	NEC	2022	TO-263-7	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市河锋鑫科技有限公司	NP180N04TUJ	RENESAS/瑞萨	2022+	TO-263	50000	原厂代理终端免费提供样品	询价
深圳市吉利鑫科技发展有限公司	NP180N04TUJ	RENESAS/瑞萨	2022+	TO-263	79999		询价
易创佳业科技（深圳）有限公司	NP180N04TUJ	NEC	23+	TO-263	6000	原装正品，支持实单	询价

更多NP18供应商更新时间2024-4-30 10:54:00

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