C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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丝印：E；GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm

文件：190.51 Kbytes 页数：14 Pages

RENESAS

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丝印：E；GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm

文件：190.51 Kbytes 页数：14 Pages

RENESAS

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C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：62.53 Kbytes 页数：12 Pages

NEC

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LOW NOISE L TO Ku BAND GaAs MESFET

文件：42.76 Kbytes 页数：4 Pages

NEC

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