NONLINEAR MODEL

DESCRIPTION NECs NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surf

文件：29.2 Kbytes 页数：1 Pages

NEC

瑞萨

NONLINEAR MODEL

文件：30.17 Kbytes 页数：1 Pages

CEL

Small Signal Silicon Bipolars

NPN Silicon Amplifier and Oscillator Transistor (Same as 2SC3583)

Renesas

瑞萨

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surf

文件：218.96 Kbytes 页数：20 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：663.14 Kbytes 页数：21 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：663.14 Kbytes 页数：21 Pages

CEL

Package：TO-236-3，SC-59，SOT-23-3；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 9GHZ SOT23

CEL

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 9GHZ SOT23

CEL

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 9GHZ SOT23

CEL