NE66219

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES •Suitableforhigh-frequencyoscillation •fT=25GHztechnologyadopted •3-pinultrasuperminimold(19,1608PKG)package

NE66219-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES •Suitableforhigh-frequencyoscillation •fT=25GHztechnologyadopted •3-pinultrasuperminimold(19,1608PKG)package

NE66219-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES •Suitableforhigh-frequencyoscillation •fT=25GHztechnologyadopted •3-pinultrasuperminimold(19,1608PKG)package

NE66219-T1-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES •Suitableforhigh-frequencyoscillation •fT=25GHztechnologyadopted •3-pinultrasuperminimold(19,1608PKG)package

NE66219-A

Package：SOT-523；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 3.3V 21GHZ SOT523

NEC66219

NPNSILICONRFTRANSISTORFORLOWNOISE쨌HIGH-GAINAMPLIFICATION3-PINULTRASUPERMINIMOLD(19,1608PKG)

FEATURES •Suitableforhigh-frequencyoscillation •fT=25GHztechnologyadopted •3-pinultrasuperminimold(19,1608PKG)package