MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5

文件：501.77 Kbytes 页数：11 Pages

CEL

N-CHANNEL GaAs HJ-FET

0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent

文件：199.45 Kbytes 页数：11 Pages

RENESAS

瑞萨

0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifi

文件：69.19 Kbytes 页数：8 Pages

NEC

瑞萨

MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5

文件：501.77 Kbytes 页数：11 Pages

CEL

0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifi

文件：69.19 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL GaAs HJ-FET

0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent

文件：199.45 Kbytes 页数：11 Pages

RENESAS

瑞萨

MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5

文件：501.77 Kbytes 页数：11 Pages

CEL

MEDIUM POWER GaAs HJ-FET

CEL

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD NE651R479A 1.9GHZ

CEL

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD NE651R479A 2.4GHZ

CEL