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NE33284A-T1中文资料瑞萨数据手册PDF规格书
NE33284A-T1规格书详情
DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
FEATURES
• VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
• LOW COST METAL/CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
产品属性
- 型号：
NE33284A-T1
- 功能描述：
MOSFET DISC BY CEL 01/02 84AS LO-NOISE HJ FET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
21+ |
SMT86 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
NEC |
24+ |
SMT86 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
NEC |
22+ |
SMT |
3000 |
原装正品,支持实单 |
询价 | ||
NEC |
20+ |
SMT36 |
49000 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NEC |
21+ |
SMT36 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
24+ |
SMT86 |
9860 |
原装现货/放心购买 |
询价 | ||
NEC |
24+ |
SO86 |
200 |
询价 | |||
NEC |
25+23+ |
SMT86 |
6738 |
绝对原装正品全新进口深圳现货 |
询价 | ||
NEC |
23+ |
SMT |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
22+ |
SMT36 |
25000 |
只有原装原装,支持BOM配单 |
询价 |
