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NE325S01-T1B中文资料CEL数据手册PDF规格书
NE325S01-T1B规格书详情
DESCRIPTION
The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.
NECs stringent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
产品属性
- 型号：
NE325S01-T1B
- 功能描述：
射频GaAs晶体管 Super Lo Noise HJFET
- RoHS：
否
- 制造商：
TriQuint Semiconductor
- 技术类型：
pHEMT
- 频率：
500 MHz to 3 GHz
- 增益：
10 dB
- 噪声系数：
正向跨导
- gFS（最大值/最小值）：
4 S 漏源电压
- 闸/源击穿电压：
- 8 V
- 漏极连续电流：
3 A
- 最大工作温度：
+ 150 C
- 功率耗散：
10 W
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2016+ |
SMT86 |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
NEC |
04+ |
SO86 |
8175 |
询价 | |||
NEC |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
NEC |
24+ |
SMT |
25000 |
一级专营品牌全新原装热卖 |
询价 | ||
6000 |
面议 |
19 |
DIP/SMD |
询价 | |||
NEC/RENESAS瑞萨 |
23+ |
cross |
89630 |
当天发货全新原装现货 |
询价 | ||
NEC |
23+ |
cross |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
NEC |
24+ |
SMD |
60100 |
郑重承诺只做原装进口现货 |
询价 | ||
24+ |
14000 |
本站现库存 |
询价 | ||||
22+ |
SMT-86 |
25000 |
只有原装原装,支持BOM配单 |
询价 |
