30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS

文件：139.03 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：66.16 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V P-Channel PowerTrench MOSFET

文件：139.54 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V P-Channel PowerTrench MOSFET

ONSEMI

安森美半导体

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：66.16 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V P-Channel PowerTrench MOSFET

文件：139.54 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司