N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：538.2 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Sensitive gate trigger current and Low Holding current. Applications Intended for use in general purpose switching and phase control applications.

文件：803.68 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：7002；Package：SOT23；60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

文件：1.02199 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：538.2 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：220.09 Kbytes 页数：10 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

N-channel enhancement mode vertical D-MOS transistor

These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching. They can be used, with a mini

TI

德州仪器