首页 >NDS356APIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel20-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NeutralGroundingResistorSystem,NGRSERIES–US Description High-resistancegroundingpreventsmanyoftheproblems thatareassociatedwithungroundedandsolidlygrounded electricaldistributionandutilizationsystems.High-resistance groundingcanlimitpoint-of-faultdamage,eliminatetransient overvoltages,reducethearc-flashhazar | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
1/2PRESS-FITSTRAIGHTLEADDIODES | SHUNYEShanghai Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SHUNYE | ||
200MHz,CMOSOPERATIONALAMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
200MHz,CMOSOPERATIONALAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
200MHz,CMOSOPERATIONALAMPLIFIERWITHSHUTDOWN | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
200MHz,CMOSOPERATIONALAMPLIFIER FEATURES UNITY-GAINBANDWIDTH:450MHz WIDEBANDWIDTH:200MHzGBW HIGHSLEWRATE:360V/μs LOWNOISE:5.8nV/√Hz EXCELLENTVIDEOPERFORMANCE: DIFFGAIN:0.02%,DIFFPHASE:0.05° 0.1dBGAINFLATNESS:75MHz INPUTRANGEINCLUDESGROUND RAIL-TO-RAILOUTPUT(within100mV) LOWINPUTBIASCURR | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
200MHz,CMOSOPERATIONALAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
