High Current IGBT/MOSFET Gate Drivers

IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features include accurate Under−voltage−lockout (UVLO), desaturation pr

文件：441.26 Kbytes 页数：21 Pages

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IGBT Gate Drivers, High-Current, Stand-Alone

The NCD5705B is a high−current, high−performance stand−alone IGBT driver for high power automotive applications that include PTC heaters, traction inverters, high voltage DC-DC and other auxiliary subsystems. The device offers a cost−effective solution by eliminating external output buffer. Device’s • High Current Output (+4.0/-6.0 A) at IGBT Miller Plateau voltages\n• Reduced switching losses and short switching times\n• Low VOH and VOL\n• Full enhancement of IGBT\n• DESAT Protection with Programmable Delay\n• Enhanced programmable protection\n• Bipolar power supply support\n• Prevents uninten;

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High Current IGBT/MOSFET Gate Drivers

IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features include accurate Under−voltage−lockout (UVLO), desaturation pr

文件：441.26 Kbytes 页数：21 Pages

ONSEMI

安森美半导体

High Current IGBT/MOSFET Gate Drivers

IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features include accurate Under−voltage−lockout (UVLO), desaturation pr

文件：441.26 Kbytes 页数：21 Pages

ONSEMI

安森美半导体

High Current IGBT/MOSFET Gate Drivers

IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features include accurate Under−voltage−lockout (UVLO), desaturation pr

文件：441.26 Kbytes 页数：21 Pages

ONSEMI

安森美半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：ISOLATED HIGH CURRENT GATE DRIVE

ONSEMI

安森美半导体