30-250V N-Channel SGT-I MOSFET

The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal forhigh-frequency switchi • V DS =40V,I D =150AR DS(ON) =1.75m? (typical) @ V GS =10V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

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30-250V N-Channel SGT-I MOSFET

NCEPower

新洁能

30-250V N-Channel SGT-I MOSFET

NCEPower

新洁能

NCE N-Channel Super Trench Power MOSFET

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NCEPOWER

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Schottky Barrier DIode

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