N沟道 MOSFET

\n The NCE80H11H uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =80V,I D =105A\nR DS(ON) < 6.5m? @ V GS =10V (Typ:5.8m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high;

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NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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N-Channel 80 V (D-S) MOSFET

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VBSEMI

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NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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