12-200V N-Channel Trench MOSFET

\n The NCE2302C uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

NCEPower

新洁能

丝印：2302C；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：261.42 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Headset Detection Interface Interface

文件：81.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Headset Detection Interface Interface

文件：81.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

CLASS A 2.3 GHZ 15 VOLT POWER TRANSISTOR

DESCRIPTION AND APPLICATIONS This L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system, emitter ballasting and silicon nitride passivation for performance and reliability. Avariety of hermetic packages and a plastic package are available for wide band amplifier

文件：225.85 Kbytes 页数：7 Pages

NEC

瑞萨