NCE2301D

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

NCE2301D

12-150V P-Channel Trench MOSFET

\n The NCE2301D uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.\n; \n• V DS = -20V,I D = -2 A\nR DS(ON) < 160m? @ V GS =-2.5V\nR DS(ON) < 120m? @ V GS =-4.5V\n• High power and current handing capability\n• Lead free product is acquired\n• Surface mount package\n;

NCE2301D

NCE P-Channel Enhancement Mode Power MOSFET

NCE2301E

NCEP-ChannelEnhancementModePowerMOSFET

NCE2301E

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

NCE2301F

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE2301Fusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas1.8V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-20V,ID=-2A RDS(ON)