P沟道 MOSFET

\n The NCE20P85G uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =-20V,I D =-85A\nR DS(ON) < 2.5m? @ V GS =-4.5V\nR DS(ON) < 4m? @ V GS =-2.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation;

NCEPower

新洁能

丝印：20P85GU；Package：DFN5x6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P85GU uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Load switch ● Battery protection General Features ● VDS =-20V,ID =-85A RDS(ON)

文件：287.49 Kbytes 页数：6 Pages

NCEPOWER

新洁能

12-150V P-Channel Trench MOSFET

NCEPower

新洁能

SOP8

NCE

上传：深圳市弘晟世纪电子科技有限公司

SOP-8

NCE/新洁能

上传：深圳市轩嘉盛电子有限公司