NCE0140K2

12-200V N-Channel Trench MOSFET; • V DS = 100V,I D =40AR DS(ON) < 17m? @ V GS =10V (Typ:14.5m?)• Special process technology for high ESD capability• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Good stability and uniformity with high E AS• Excellent package for good heat dissipation;

The NCE0140K2 uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.

NCE0140K2

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