NCD57001FDWR2G集成电路（IC）的栅极驱动器规格书PDF中文资料

NCD57001FDWR2G属于集成电路（IC）的栅极驱动器。由安森美半导体制造生产的NCD57001FDWR2G栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

NCD57001F is a variant of NCD57001 with reduced

Soft−Turn−Off time suited to drive large IGBTs or power modules.

NCD57001F is a high−current single channel IGBT driver with

internal galvanic isolation, designed for high system efficiency and

reliability in high power applications. Its features include

complementary inputs, open drain FAULT and Ready outputs, active

Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off

at DESAT. NCD57001F accommodates both 5 V and 3.3 V signals on

the input side and wide bias voltage range on the driver side including

negative voltage capability. NCD57001F provides >5 kVrms

(UL1577 rating) galvanic isolation and >1200 Viorm (working

voltage) capabilities. NCD57001F is available in the wide−body

SOIC−16 package with guaranteed 8 mm creepage distance between

input and output to fulfill reinforced safety insulation requirements.

特性 Features

• High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages

• Low Output Impedance for Enhanced IGBT Driving

• Short Propagation Delays with Accurate Matching

• Active Miller Clamp to Prevent Spurious Gate Turn−on

• DESAT Protection with Programmable Delay

• Typ 550 ns Soft Turn Off during IGBT Short Circuit

• IGBT Gate Clamping during Short Circuit

• IGBT Gate Active Pull Down

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2

• 3.3 V to 5 V Input Supply Voltage

• 5000 V Galvanic Isolation (to meet UL1577 requirements)

• 1200 V Working Voltage (per VDE0884−10 requirements)

• High transient immunity

• High electromagnetic immunity

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

Typical Applications

• Automotive Power Supplies

• HEV/EV Powertrain

• BSG Inverter

• PTC Heater