零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N9952A | FieldFox Handheld Analyzers | KEYSIGHTKeysight Technologies 德科技(中国德科技(中国)有限公司 | KEYSIGHT | |
3MTMSingleCoatedMedicalPlasticTape | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
Electronic,2C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt ProductDescription Electronic,2Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket | BELDEN Belden Inc. | BELDEN | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Cat5eUTPPatchCable | ASSMANNASSMANN WSW COMPONENTS ASSMANN WSW组件有限公司 | ASSMANN | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■30V,3.7A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
PowerMOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTRALOWONRESISTANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
08+ |
DIP |
1000 |
询价 | |||
T |
22+ |
DIP40 |
3629 |
原装优势!房间现货!欢迎来电! |
询价 | ||
TEMIC |
2020+ |
DIP40 |
18 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
LUX |
24+25+/26+27+ |
白炽灯 |
9358 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NEC |
6000 |
面议 |
19 |
BGA |
询价 | ||
Richco |
2022+ |
4 |
全新原装 货期两周 |
询价 | |||
Essentra |
22+ |
NA |
1146 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
NSC |
2023+环保现货 |
QFP |
275 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
NUVOTON |
23+ |
NA |
4 |
现货!就到京北通宇商城 |
询价 | ||
NUVOTON/新唐 |
24+ |
LQFP128 |
39500 |
进口原装现货 支持实单价优 |
询价 |
相关规格书
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- N9H20K11N
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- N9H30K4IEC
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- NA
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- NA0276M2A-10
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更多- N9961A
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- N-9B-19
- N9H20
- N9H20K1N
- N9H20K3N
- N9H20K5N
- N9H20R1N
- N9H20R5N
- N9H26
- N9H26K51N
- N9H30
- N9H30_V01
- N9H30F4IEC
- N9H30F51I
- N9H30F5IE
- N9H30F5IEC
- N9H30F61IEC
- N9H30F6IEC
- N9H30F71IEC
- N9H30F7IEC
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- NA0013-NA0018
- NA0068LF_17
- NA0069R1LF
- NA0069RMLF
- NA0108B
- NA0253
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- NA0276M2A-15
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- NA0276M2A-20D
- NA0276M2A-L10
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