| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-channel MOSFET 600V, 1A, 9.3Ω Description TheN6001NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=9.3ΩMAX.(VGS=10V,ID=0.5A) •Lowinputcapacitance Ciss=215pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±1.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 1A, 9.3Ω Description TheN6001NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=9.3ΩMAX.(VGS=10V,ID=0.5A) •Lowinputcapacitance Ciss=215pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±1.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6002NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6002NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 4A, 2.0Ω Description TheN6004NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=2.0ΩMAX.(VGS=10V,ID=2.0A) •Lowinputcapacitance Ciss=900pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±4.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 4A, 2.0Ω Description TheN6004NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=2.0ΩMAX.(VGS=10V,ID=2.0A) •Lowinputcapacitance Ciss=900pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±4.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 6A, 1.2Ω Description TheN6006NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=1.2ΩMAX.(VGS=10V,ID=3.0A) •Lowinputcapacitance Ciss=1385pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±6.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 6A, 1.2Ω Description TheN6006NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=1.2ΩMAX.(VGS=10V,ID=3.0A) •Lowinputcapacitance Ciss=1385pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±6.0 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 8A, 0.75Ω Description TheN6008NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=0.75ΩMAX.(VGS=10V,ID=4.0A) •Lowinputcapacitance Ciss=2145pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±8. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 600V, 8A, 0.75Ω Description TheN6008NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=0.75ΩMAX.(VGS=10V,ID=4.0A) •Lowinputcapacitance Ciss=2145pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±8. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MATLAB Data Analysis MATLABOverview MATLABisawellknownandrespecteddataanalysissoftwareenvironmentandprogramminglanguagedevelopedbyTheMathWorksandnowavailableforpurchasedirectlyfromAgilent.MATLABsoftwarecanbeusedtomakemeasurements,analyzeandvisualizedata,generatearbitrarywavefo | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
Voidless Hermetically Sealed Unidirectional Voidless Hermetically Sealed Unidirectional DESCRIPTION Thisseriesofindustryrecognizedvoidless-hermetically-sealedUnidirectionalTransientVoltageSuppressor(TVS)designsismilitaryqualifiedtoMIL-PRF-19500/551andareidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.TheyprovideaWorkingPeak“Stand | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits Overview TheN64T1630C1Bisanintegratedmemory devicecontaininga64MbitPseudoStaticRandom AccessMemoryusingaself-refreshDRAMarray organizedas4,194,304wordsby16bits.Itis designedtobecompatibleinoperationand interfacetostandard6TSRAMS.Thedeviceis designedfo | NANOAMP NanoAmp Solutions, Inc. | NANOAMP | ||
64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits Overview TheN64T1630C1Bisanintegratedmemory devicecontaininga64MbitPseudoStaticRandom AccessMemoryusingaself-refreshDRAMarray organizedas4,194,304wordsby16bits.Itis designedtobecompatibleinoperationand interfacetostandard6TSRAMS.Thedeviceis designedfo | NANOAMP NanoAmp Solutions, Inc. | NANOAMP | ||
64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits Overview TheN64T1630C1Bisanintegratedmemory devicecontaininga64MbitPseudoStaticRandom AccessMemoryusingaself-refreshDRAMarray organizedas4,194,304wordsby16bits.Itis designedtobecompatibleinoperationand interfacetostandard6TSRAMS.Thedeviceis designedfo | NANOAMP NanoAmp Solutions, Inc. | NANOAMP | ||
N-channel MOSFET 650V, 5.5A, 2.1 Description TheN6504NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=2.1MAX.(VGS=10V,ID=2.75A) Lowinputcapacitance Ciss=950pFTYP.(VDS=10V,VGS=0V) Highcurrent ID(DC)=±5.5 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 650V, 5.5A, 2.1 Description TheN6504NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=2.1MAX.(VGS=10V,ID=2.75A) Lowinputcapacitance Ciss=950pFTYP.(VDS=10V,VGS=0V) Highcurrent ID(DC)=±5.5 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-channel MOSFET 650V, 7.5A, 1.3 Description TheN6506NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=1.3MAX.(VGS=10V,ID=3.75A) Lowinputcapacitance Ciss=1385pFTYP.(VDS=10V,VGS=0V) Highcurrent ID(DC)=±7. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
1000 |
只做原装!公司现货库存!QQ:2369405325 |
询价 | |||
Bivar |
22+ |
NA |
3284 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
RENESAS |
1726+ |
TO-251 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-251 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS/瑞萨 |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
询价 | ||
RENESAS/瑞萨 |
24+ |
TO-251 |
1800 |
原装现货假一赔十 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-251 |
9000 |
原装正品 |
询价 | ||
RENESAS/瑞萨 |
2022 |
TO-251 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
询价 |
相关规格书
更多- N-600-2
- N6002NZ
- N6003NZ
- N6004NZ
- N6006NZ
- N6008NZ
- N-60APU06
- N-60EPU06
- N60N04VDK
- N6141A
- N6152A
- N6155A
- N6158A
- N6171A
- N-6-19-BK
- N643GT5KI
- N643GT7MI
- N6456A
- N6457A
- N6458A
- N6461A
- N6462A-1NL
- N6465A
- N6466A
- N6466B
- N6467A
- N6467B
- N6468US
- N64S0818HDA
- N64S08XXHDA
- N64S818HA
- N64S818HAS21I
- N64S818HAS21IT
- N64S818HAT21I
- N64S818HAT21IT
- N64S830HA
- N64S830HA_12
- N64S830HAS22I
- N64S830HAS22IT
- N64S830HAT22I
- N64S830HAT22IT
- N64T1630C1BZ
- N-650-2
- N6504NZ
- N6506NZ
相关库存
更多- N-600-2
- N6002NZ-S29-AY
- N6003NZ-S17-AY
- N6004NZ-S17-AY
- N6006NZ-S17-AY
- N6008NZ-S17-AY
- N-60APU12
- N-60EPU12
- N6111
- N6141C
- N6153A
- N6156A
- N6171A
- N-6-19
- N631
- N643GT7GI
- N6456A
- N6457A
- N6457A
- N6460B
- N6462A
- N6463B
- N6465B
- N6466A-1NL
- N6466B
- N6467A-1NL
- N6468A
- N6470A
- N64S0830HDA
- N64S818HA
- N64S818HA_12
- N64S818HAS21I
- N64S818HAS21IT
- N64S818HAT21I
- N64S818HAT21IT
- N64S830HA
- N64S830HAS22I
- N64S830HAS22IT
- N64S830HAT22I
- N64S830HAT22IT
- N64T1630C1B
- N64T1630C1BZ-70I
- N-650-2
- N6504NZ-S17-AY
- N6506NZ-S17-AY
