丝印：N6；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

文件：143.08 Kbytes 页数：16 Pages

PHI

PHI

丝印：N6；Package：SOT-343N；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：N6；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：73.09 Kbytes 页数：11 Pages

PHI

PHI

丝印：N6；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP

丝印：N6；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：N6；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：306.61 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：N6；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

文件：532.33 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：N6；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

文件：532.33 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：N6；Package：DFN1006P3；Transient Voltage Suppressors for ESD Protection

Features 42 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two Bidirectional I/O lines Low clamping voltage Working voltages : 3.3V Low leakage current IEC61000-4-2(ESD) ±15kV (air discharge) ±8kV (contact discharge) Applications Cell Phone Handsets and Accessories Microprocessor

文件：2.3325 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：N6；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

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