N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET

Description This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：228.76 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET

ST

意法半导体

N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：260.18 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V - 0.039 廓 - 6.5 A - SOT-223 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：232.89 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET

Description This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：228.76 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体