串行 SRAM 存储器，1 Mb，超低功耗，2.5 至 5.5 V

The ON Semiconductor serial SRAM family includes several\nintegrated memory devices including this 1 Mb serially accessed\nStatic Random Access Memory, internally organized as 128 K words\nby 8 bits. The devices are designed and fabricated using\nON Semiconductor’s advanced CMOS technology to provid • Power Supply Range: 2.5 to 5.5 V\n• Very Low Operating Current: \n• Flexible Operating Modes- Word Mode- Page Mode - Burst Mode (Full Array)\n• Functional Options- HOLD Pin for Pausing Operation - VBAT Pin for Battery−Back up\n• High Reliability- Unlimited Write Cycles;

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：99.63 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：99.63 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：99.63 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：99.63 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：136.8 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：136.8 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：99.63 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：99.63 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

1 Mb Ultra-Low Power Serial SRAM

文件：136.8 Kbytes 页数：13 Pages

ONSEMI

安森美半导体