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NDB608A	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608A	文件：306.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDB608AE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608AE	文件：306.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDB608B	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608B	文件：306.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDB608BE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608BE	文件：306.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608A	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608A	文件：296.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608AE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608AE	文件：296.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608B	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608B	文件：296.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608BE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608BE	文件：296.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
OPB608	文件：311.63 Kbytes Page：9 Pages	ReflectiveObjectSensor Description TheOPB608consistsofaninfraredemittingdiodeandanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing. Features •Phototransistoroutput •Unfocusedforsensingdiffusesurface •Lowcostplastichousing •Enhancedsignal	Optek OPTEK Technologies	Optek
OPB608A	文件：223.73 Kbytes Page：2 Pages	REFLECTIVEOBJECTSENSORS TheOPB608isareflectiveswitchthatconsistofaninfraredemittingdevice(LEDorVCSEL)andanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing.Boththeemittingdeviceandphototransistorareencapsulatedinavisiblefilteringepoxyex	Optek OPTEK Technologies	Optek
OPB608A	文件：311.63 Kbytes Page：9 Pages	ReflectiveObjectSensor Description TheOPB608consistsofaninfraredemittingdiodeandanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing. Features •Phototransistoroutput •Unfocusedforsensingdiffusesurface •Lowcostplastichousing •Enhancedsignal	Optek OPTEK Technologies	Optek
OPB608A	文件：782.12 Kbytes Page：5 Pages	ReflectiveObjectSensor Description: OPB608reflectiveswitchesconsistofaninfraredemittingdevice(LEDorVCSEL)andaNPNsiliconphototransistormounted“sideby-side”onaparallelaxisinablackopaqueplastichousing.AllOPB608’s(exceptOPB608R)haveanemittingdeviceandaphototransistorthatareencapsul	TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司	TTELEC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创盛芯科技有限公司	MXL608IC	MAXLINE	22+	QFN	27	原装现货假一赔十	询价
深圳市大联智电子有限公司	MXL608IC	MAXLINE	22+	QFN	354000		询价
深圳市科雨电子有限公司	M-XL-6-11L	ITT	20+	连接器	493	就找我吧!--邀您体验愉快问购元件!	询价
现代芯城（深圳）科技有限公司	M-XL-6-11L		24+	N/A	75000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳宇航军工半导体有限公司	MXL661	MAXIM	19+	QFN24	256800	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
中天科工半导体（深圳）有限公司	MXL661	MAXLINE	20+	QFN	19570	原装优势主营型号-可开原型号增税票	询价
深圳市杰顺创科技有限公司	MXL661	MAXLINE	21+	QFN	5000	全新原装现货价格优势	询价
深圳市信佳源电子有限公司	MXL661	MAXLINE	1450+	QFN	200	原装/现货	询价
深圳市科恒伟业电子有限公司	MXL661	MAXLINEAR	22+	QFN24	9800	只做原装正品假一赔十!正规渠道订货!	询价
贸泽芯城（深圳）电子科技有限公司	MXL661	MSTAR/晨星半导体	23+	QFN	18500	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多MXL608IC供应商更新时间2024-9-23 9:03:00

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