MW7IC2040NB数据手册恩XP中文资料规格书

描述 Description

The MW7IC2040NR1, MW7IC2040GNR1 and MW7IC2040NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations.

特性 Features

• Typical Single-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probabilityon CCDF.
• Power Gain: 32 dB
• Power Added Efficiency: 17.5%
• ACPR @ 5 MHz Offset: –50 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 40 Watts CW Pout.
• Typical Pout @ 1 dB Compression Point ≃ 30 Watts CW
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 16 Watts Avg., 1805–1880 MHz
• Power Gain: 33 dB
• Power Added Efficiency: 35%
• Spectral Regrowth @ 400 kHz Offset = –62 dBc
• Spectral Regrowth @ 600 kHz Offset = –77 dBc
• EVM: 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 Watts CW, 1805–1880 MHz and 1930–1990 MHz
• Power Gain: 31 dB
• Power Added Efficiency: 50%
• Characterized with Series Equivalent Large–Signal Impedance Parametersand Common Source S-Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.