GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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Microsemi

美高森美

2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold met

文件：39.3 Kbytes 页数：2 Pages

Ericsson

爱立信

Swept Wavelength System

文件：1.02922 Mbytes 页数：8 Pages

JDSU

捷迪讯

Swept Wavelength System

文件：1.02922 Mbytes 页数：8 Pages

JDSU

捷迪讯