MTW24N40E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTW24N40E

TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MTW24N40E

N?묬hannel Power MOSFET

MTW24N40E

TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM

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MTW24N40E

N−Channel Power MOSFET