MTSF3N03HD

SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM

MediumPowerSurfaceMountProducts TMOSSingleN-ChannelFieldEffectTransistor Micro8devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighener

MTSF3N03HD

Power MOSFET

MTSF3N03HDR2

Power MOSFET

MMDF3N03HD

DUALTMOSPOWERMOSFET4.1AMPERES30VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Th

MMDF3N03HD

PowerMOSFET3Amps,30Volts

MMDJ3N03BJT

PlasticPowerTransistorsSO??forSurfaceMountApplications

MMDJ3N03BJT

DUALBIPOLARPOWERTRANSISTORNPNSILICON30VOLTS3AMPERES

PlasticPowerTransistors SO–8forSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =100Vdc(Min)@IC=1.0Adc =

SDT3N03

3.5A,30V,RDS(ON)55m
(ohm)Dual-NEnhancementModeMOSFET