isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：290.6 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FETs 3 AMPERES

文件：131.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TMOS POWER FETs 3 AMPERES

文件：131.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.1 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.28939 Mbytes 页数：9 Pages

VBSEMI

微碧半导体