零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MTM12N20 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMosfets | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
12A,180Vand200V,0.250Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv | Intersil Intersil Corporation | Intersil | ||
N-ChannelEnhancementModePowerFieldEffectTransistors
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelEnhancementModePowerFieldEffectTransistors
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
12A,180Vand200V,0.250Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv | Intersil Intersil Corporation | Intersil | ||
SingleN-Channel4.5VSpecifiedMicroSurf | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic | DIODES Diodes Incorporated | DIODES | ||
DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic | ZetexZetex Semiconductors 捷特科半导体 | Zetex | ||
DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic | ZetexZetex Semiconductors 捷特科半导体 | Zetex | ||
DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic | DIODES Diodes Incorporated | DIODES | ||
DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic | DIODES Diodes Incorporated | DIODES | ||
DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic | ZetexZetex Semiconductors 捷特科半导体 | Zetex |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
N/A |
1160 |
询价 | ||||
MOTOROLA |
16+ |
TO-3 |
1100 |
原装现货假一罚十 |
询价 | ||
MOTOROLA |
专业铁帽 |
TO-3 |
1100 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
MOTOROLA/摩托罗拉 |
23+ |
TO-3 |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
MOTOROLA |
23+ |
原厂封装 |
9526 |
询价 | |||
MOT |
23+ |
2脚铁帽 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOT |
2020+ |
TO-2 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MOTO |
2023+ |
TO-3 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MOTO |
21+ |
TO-3 |
35210 |
一级代理/放心采购 |
询价 |
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