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MTM12N20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP12N20

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP12N20

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

MTP12N20

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP12N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP12N20

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFM12N20

12A,180Vand200V,0.250Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

Intersil

Intersil Corporation

RFM12N20

N-ChannelEnhancementModePowerFieldEffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFP12N20

N-ChannelEnhancementModePowerFieldEffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFP12N20

12A,180Vand200V,0.250Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

Intersil

Intersil Corporation

TS12N20CS

SingleN-Channel4.5VSpecifiedMicroSurf

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

ZXT12N20DX

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

DIODES

Diodes Incorporated

ZXT12N20DX

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

ZetexZetex Semiconductors

捷特科半导体

ZXT12N20DXTA

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

ZetexZetex Semiconductors

捷特科半导体

ZXT12N20DXTA

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

DIODES

Diodes Incorporated

ZXT12N20DXTC

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

DIODES

Diodes Incorporated

ZXT12N20DXTC

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

ZetexZetex Semiconductors

捷特科半导体

供应商型号品牌批号封装库存备注价格
MOT
N/A
1160
询价
MOTOROLA
16+
TO-3
1100
原装现货假一罚十
询价
MOTOROLA
专业铁帽
TO-3
1100
原装铁帽专营,代理渠道量大可订货
询价
MOTOROLA/摩托罗拉
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
MOTOROLA/摩托罗拉
23+
TO-3
15238
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MOTOROLA
23+
原厂封装
9526
询价
MOT
23+
2脚铁帽
5000
原装正品,假一罚十
询价
MOT
2020+
TO-2
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
MOTO
2023+
TO-3
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MOTO
21+
TO-3
35210
一级代理/放心采购
询价
更多MTM12N20供应商 更新时间2024-9-24 10:20:00