isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：293.05 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

文件：385.24 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

恩XP

恩智浦

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

文件：385.24 Kbytes 页数：5 Pages

Motorola

摩托罗拉

N-Channel Power MOSFETs, 10A, 350V/400V

文件：154.43 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFETs

文件：345.62 Kbytes 页数：5 Pages

ARTSCHIP