MTB60N05HDL

N?묬hannel Power MOSFET

MTM60N05

N-CHANNELTWOSPOWERFETs

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

MTP60N05

TMOSPOWERFET60AMPERES50VOLTSRDS(on)=0.014OHM

TMOSPOWERFET60AMPERES50VOLTSRDS(on)=0.014OHM Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvol

MTP60N05HDL

TMOSPOWERFET60AMPERES50VOLTSRDS(on)=0.014OHM

TMOSPOWERFET60AMPERES50VOLTSRDS(on)=0.014OHM Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvol

OM60N05SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

SSP60N05

NCHANNELPOWERMOSFETS

UTT60N05

60A,50VN-CHANNELENHANCEMENTMODEPOWERMOSFETTRANSISTOR

DESCRIPTION TheUTCUTT60N05isanN-channelenhancementpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),highswitchingspeed,highcurrentcapacityandlowgatecharge. TheUTCUTT60N05issuitableformotorcontrol,AC-DCorDC-DCconvertersandaudi