首页 >MT4LC8M8E1>规格书列表
型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
MT4LC8M8E1 | DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | |
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | ||
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | ||
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | ||
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | ||
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | ||
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | ||
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron | ||
DRAM GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup 文件:382.2 Kbytes 页数:20 Pages | Micron 美光 | Micron |
详细参数
- 型号:
MT4LC8M8E1
- 制造商:
MICRON
- 制造商全称:
Micron Technology
- 功能描述:
DRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MTTEL |
25+ |
SOP8 |
18000 |
原厂直接发货进口原装 |
询价 | ||
MICRON |
24+ |
TSOP32 |
29000 |
询价 | |||
Micron |
23+ |
TSOP |
20000 |
原厂授权代理分销现货只做原装正迈科技样品支持现货 |
询价 | ||
MT |
00+ |
TSOP32 |
400 |
全新原装进口自己库存优势 |
询价 | ||
MT |
SOP |
21000 |
正品原装--自家现货-实单可谈 |
询价 | |||
MICRON |
25+ |
TSOP-34 |
4650 |
询价 | |||
MICRON |
2016+ |
TSOP32 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
MTTEL |
23+ |
DIP-18P |
5000 |
原装正品,假一罚十 |
询价 | ||
MT |
24+ |
TSOP32 |
5000 |
只做原装公司现货 |
询价 | ||
MT |
17+ |
TSOP32 |
9988 |
只做原装进口,自己库存 |
询价 |
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相关库存
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