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MT4LC4M16R6

DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件:474.53 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6

DRAM

Micron

美光

MT4LC4M16R6TG-5

DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件:474.53 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6TG-5S

DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件:474.53 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6TG-6

DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件:474.53 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6TG-6S

DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件:474.53 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6-1

DRAM

文件:413.1 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6TG-5

DRAM

文件:413.1 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6TG-5S

DRAM

文件:413.1 Kbytes 页数:24 Pages

Micron

美光

MT4LC4M16R6TG-6

DRAM

文件:413.1 Kbytes 页数:24 Pages

Micron

美光

详细参数

  • 型号:

    MT4LC4M16R6

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    DRAM

供应商型号品牌批号封装库存备注价格
24+
SMD50
3
自己现货
询价
MICRON
23+24
TSOP-
9680
原盒原标.进口原装.支持实单 .价格优势
询价
MIC
24+
9850
公司原装现货/随时可以发货
询价
MICRON
2410+
TSOP
3266
优势代理渠道 原装现货 可全系列订货
询价
MT
25+
SOP8
18000
原厂直接发货进口原装
询价
MICRON
13+
TSOP-50
2238
原装分销
询价
MICRON
05+
原厂原装
445
只做全新原装真实现货供应
询价
MT
TSSOP
425
正品原装--自家现货-实单可谈
询价
MCT
24+/25+
167
原装正品现货库存价优
询价
MT
17+
TSSOP
6200
100%原装正品现货
询价
更多MT4LC4M16R6供应商 更新时间2025-10-6 16:00:00