EDO DRAM

GENERAL DESCRIPTION The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance CMOS silicon-gate process • Single power supply (+

文件：385.15 Kbytes 页数：24 Pages

Micron

美光

EDO DRAM

Micron

美光

EDO DRAM

GENERAL DESCRIPTION The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance CMOS silicon-gate process • Single power supply (+

文件：385.15 Kbytes 页数：24 Pages

Micron

美光

EDO DRAM

GENERAL DESCRIPTION The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance CMOS silicon-gate process • Single power supply (+

文件：385.15 Kbytes 页数：24 Pages

Micron

美光

EDO DRAM

GENERAL DESCRIPTION The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance CMOS silicon-gate process • Single power supply (+

文件：385.15 Kbytes 页数：24 Pages

Micron

美光

EDO DRAM

GENERAL DESCRIPTION The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance CMOS silicon-gate process • Single power supply (+

文件：385.15 Kbytes 页数：24 Pages

Micron

美光