SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 67,108,864-bit b

文件：1.20413 Mbytes 页数：55 Pages

Micron

美光

SYNCHRONOUS DRAM

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 67,108,864-bit b

文件：1.20413 Mbytes 页数：55 Pages

Micron

美光

IC DRAM 256M PARALLEL 86TSOP II

Micron

美光

SDRAM

Micron

美光

Package：90-VFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90VFBGA

Micron Technology Inc.

Package：90-VFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90VFBGA

Micron Technology Inc.

Package：90-VFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90VFBGA

Micron Technology Inc.