SYNCHRONOUS DRAM

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

文件：1.28127 Mbytes 页数：52 Pages

Micron

美光

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes 页数：79 Pages

Micron

美光

1 Meg x 32 x 4 Banks SDR SDRAM

• PC100-compliant\n• Fully synchronous; all signals registered on positive edge of system clock\n• Internal pipelined operation; column address can be changed every clock cycle\n• Internal banks for hiding row access/precharge\n• Programmable burst lengths: 1, 2, 4, 8, or full page\n• Auto precharge;

Micron

美光

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

文件：4.59485 Mbytes 页数：80 Pages

Micron

美光

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

文件：4.59485 Mbytes 页数：80 Pages

Micron

美光

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

文件：4.59485 Mbytes 页数：80 Pages

Micron

美光

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

文件：4.59485 Mbytes 页数：80 Pages

Micron

美光

SYNCHRONOUS DRAM

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

文件：1.28127 Mbytes 页数：52 Pages

Micron

美光

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

文件：4.59485 Mbytes 页数：80 Pages

Micron

美光

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes 页数：79 Pages

Micron

美光