首页 >MT48LC16M8A2>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MT48LC16M8A2 | SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | |
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron |
详细参数
- 型号：
MT48LC16M8A2
- 制造商：
MICRON
- 制造商全称：
Micron Technology
- 功能描述：
SYNCHRONOUS DRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MTCRON |
0748+ |
TSOP |
1532 |
原包原盒现货可订货价格优势 |
询价 | ||
MT |
1116+ |
TSSOP |
6869 |
绝对原装现货 |
询价 | ||
MICRON |
TSOP54 |
279 |
正品原装--自家现货-实单可谈 |
询价 | |||
MICRON |
23+ |
SOP |
18000 |
询价 | |||
MICRON |
23+ |
TSOP |
11923 |
询价 | |||
MCT |
2003 |
760 |
原装正品现货供应 |
询价 | |||
MT |
30 |
TSOP54 |
5000 |
公司存货 |
询价 | ||
MICRON |
2017+ |
TSOP54 |
45248 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
MicronTechnologyInc |
2022 |
ICSDRAM128MB133MHZ54TSOP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
MICRON |
2020+ |
TSOP54 |
425 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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