首页 >MT48H8M32LF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MT48H8M32LF | 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
包装：托盘 封装/外壳：90-VFBGA 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90VFBGA | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
包装：托盘 封装/外壳：90-VFBGA 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90VFBGA | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
包装：托盘 封装/外壳：90-VFBGA 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90VFBGA | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron |
详细参数
- 型号：
MT48H8M32LF
- 制造商：
MICRON
- 制造商全称：
Micron Technology
- 256Mb：
16 Meg x 16, 8 Meg x 32 Mobile SDRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
1436+ |
BGA |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
MICRON镁光 |
2010+ |
TSOP |
2150 |
一定是全新原厂原装现货SDRAM系列 |
询价 | ||
Micron |
17+ |
6200 |
询价 | ||||
MICRON |
05+ |
BGA |
21 |
询价 | |||
MICRON |
23+ |
SOP |
18000 |
询价 | |||
MICRON |
23+ |
BGA |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
MICRON |
2020+ |
O-NEWB |
9 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MicronTechnologyInc |
2022 |
ICSDRAM256MBIT132MHZ90VF |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
MICRON |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
MICRON |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
询价 |
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