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MT28F400B3

FLASH MEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F400B3SG-8B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F400B3SG-8T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F400B3VG-8B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F400B3VG-8T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F400B3WG-8B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F400B3WG-8T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

MT28F400B3SG-8 B TR

Package:44-SOIC(0.496",12.60mm 宽);包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC FLASH 4MBIT PARALLEL 44SOP

ELPIDAElpida Memory

美光科技美光科技股份有限公司

MT28F400B3SG-8 BET

Package:44-SOIC(0.496",12.60mm 宽);包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC FLASH 4MBIT PARALLEL 44SOP

ELPIDAElpida Memory

美光科技美光科技股份有限公司

MT28F400B3SG-8 BET TR

Package:44-SOIC(0.496",12.60mm 宽);包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC FLASH 4MBIT PARALLEL 44SOP

ELPIDAElpida Memory

美光科技美光科技股份有限公司

详细参数

  • 型号:

    MT28F400B3

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    FLASH MEMORY

供应商型号品牌批号封装库存备注价格
MT
23+
TSSOP
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MICRON
23+
SOP
11923
询价
MT
SOP44
19
全新原装进口自己库存优势
询价
24+
SOP/44
7500
十年品牌!原装现货!!!
询价
MT
16+
QFP
4000
进口原装现货/价格优势!
询价
MICRON
2016+
TSOP48
6523
只做进口原装现货!假一赔十!
询价
24+
SMD
5000
公司存货
询价
MICR
23+
SOP
5000
原装正品,假一罚十
询价
MICRON
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MICRON
2016+
SOP44
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多MT28F400B3供应商 更新时间2025-7-14 11:10:00