MT28F160C3中文资料镁光数据手册PDF规格书

GENERAL DESCRIPTION

The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).

The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O supply of 2.7V (MIN). Programming in production is accomplished by using high voltage which can be supplied on a separate line.

FEATURES

• Thirty-nine erase blocks:

Eight 4K-word parameter blocks

Thirty-one 32K-word main memory blocks

• VCC, VCCQ and VPP voltages:

2.7V–3.3V VCC

2.7V–3.3V VCCQ*

1.65V–3.3V and 12V VPP

• Address access times:

90ns, 110ns at 2.7V–3.3V

• Low power consumption:

Standby and deep power-down mode < 1µA (typical ICC)

Automatic power saving feature (APS mode)

• Enhanced WRITE/ERASE SUSPEND (1µs typical)

• 128-bit OTP area for security purposes

• Industry-standard command set compatibility

• Software/hardware block protection