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19N10

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10G

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10G-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10L

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10L-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10V

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

FQB19N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB19N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-ChannelQFET짰MOSFET100V,15.6A,100m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

Features LowGateCharge(Typ.14nC) LowCrss(Typ.35pF) VDS(V)=100V ID=15.6A(VGS=10V) RDS(ON)

UMWUMW

友台友台半导体

FQD19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD19N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD19N10L

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10L

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

FQD19N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
NA
19+
TO-252-2L
85721
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
23+
N/A
48900
正品授权货源可靠
询价
VB
2019
TO-252
55000
绝对原装正品假一罚十!
询价
M
23+
TO-252
12300
全新原装真实库存含13点增值税票!
询价
原厂
2020+
TO-252
20000
公司代理品牌,原装现货超低价清仓!
询价
MT茂钿
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
MT
22+
SOT-252
20000
保证原装正品,假一陪十
询价
MT茂钿
23+
TO-252
22500
公司只做原装正品
询价
MT茂钿
23+
TO-252
50000
全新原装正品现货,支持订货
询价
VBsemi
21+
TO252
50000
全新原装正品现货,支持订货
询价
更多MT19N10供应商 更新时间2024-5-16 11:08:00