首页 >MST5330BTS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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35V,1.6μAUltraLowQuiescentCurrent,200mA,LowDropoutVoltageRegulator Description TheMST53XXBseriesisahighvoltage， ultralow-power，lowdropoutvoltageregulator.The devicecandeliver100mAoutputcurrentwitha dropoutvoltageof300mVandallowsaninput voltageashighas35V.Thetypicalquiescentcurrent isonly1.6µA.Thedeviceisavailableinfi | MILESTONEWUXI MILESTONE SEMICONDUCTOR INC. 力芯微无锡力芯微电子股份有限公司 | MILESTONE | ||
TRANSISTORCOUPLER GaAsinfraredEMITTINGDIODE&NPNSILICONPHOTOTRANSISTOR TheMT5350consistsofagalliumarsenideinfraredemittingdiodecoupledwithasiliconphototransistorinadualin-linepackage APPLICATIONS •ACLINE/DIGITALLOGICISOLATOR •DIGITALLOGIC/DIGITALLOGICISOLATOR •TELEPHONE | Marktech Marktech Corporate | Marktech | ||
DualBiasResistorTransistorNPNPNPSilicon DualBiasResistorTransistor NPN+PNPSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
DualBiasResistorTransistors | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 | YEASHIN | ||
DUALBIASRESISTORTRANSISTORNPN&PNPWITHMONOLITHICBIASRESISTORNETWORK DESCRIPTION TheBRT(BiasResistorTransistor)containsasingle transistorwithamonolithicbiasnetworkconsisting oftworesistors;aseriesbaseresistoranda baseemitterresistor.Thesedigitaltransistorsare designedtoreplaceasingledeviceanditsexternal resistorbiasnetwor | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
1310nmInGaAsPMQW-FPLASERDIODEFOROTDRAPPLICATIONS | CEL California Eastern Labs | CEL | ||
1310nmInGaAsPMQW-FPLASERDIODEFOROTDRAPPLICATIONS | CEL California Eastern Labs | CEL | ||
30V,3APNPlowVCEsat(BISS)transistor 1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. NPNcomplement:PBSS4330PA. 2.Featuresandbenefits •Lowcollector-emitter | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,3APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. NPNcomplement:PBSS4330PAS Featu | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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