首页 >MST30H1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconNChannelIGBTHighspeedpowerswitching *Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1Amax. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelIGBTHighspeedpowerswitching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1Amax. ●IsolatedpackageTO-220FL | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelIGBTHighspeedpowerswitching *Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1Amax. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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