700V, 7.5 mOhm, SP6P, Triple Vienna Rectifier mSiC™ MOSFET Module

•SiC Power MOSFET -Low RDS(on) -High temperature performance •Kelvin source for easy drive •Low stray inductance •High efficiency converter • Internal thermistor for temperature monitoring •Outstanding performance at high frequency operation •Stable temperature behavior •Direct mounting to heatsink • Configuration: Triple Vienna Rectifier\n• RDSon (mR) typ:7.5\n• Silicon type: SiC MOSFET \n• Package type: SP6P;

Microchip

微芯科技

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：PM-MOSFET-SIC-SBD-SP6P

Microchip

微芯科技

QFP128

MSTAR

上传：瀚佳科技(深圳)有限公司

QFP

MSTAR/晨星半导体

上传：深圳市鹏兴电子有限公司

QFP-216

MSTAR

上传：上海鑫科润电子科技有限公司