首页 >MSB16N03>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=67mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOS??logiclevelFET | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHD16N03TinSOT428(D-PAK). Features ■FastSwitching ■TrenchMOSTMtechnology. Applications ■DC-to-DCconverters ■Generalp | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
16A,30V,0.025Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | Intersil Intersil Corporation | Intersil | ||
16A,30V,AvalancheRatedN-ChannelLogicLevelEnhancement-ModePowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
16A,30V,AvalancheRatedN-ChannelLogicLevelEnhancement-ModePowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
16A,30V,0.025Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | Intersil Intersil Corporation | Intersil | ||
16A,30V,0.025Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | Intersil Intersil Corporation | Intersil | ||
16A,30V,AvalancheRatedN-ChannelLogicLevelEnhancement-ModePowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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