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TSCDF10065G1

10A,650VSiCMergedPINSchottkyDiode

FEATURES Maxjunctiontemperature175°C MPSstructureforhighruggednesstoforwardcurrent surgeevents High-speedswitchingpossible Highforwardsurgecapability High-frequencyoperation PositivetemperaturecoefficientonVF RoHScompliant Halogen-free APPLICATIONS Generalpurpose

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSCDT10065G1

10A,650VSiCMergedPINSchottkyDiode

FEATURES Maxjunctiontemperature175°C MPSstructureforhighruggednesstoforwardcurrent surgeevents High-speedswitchingpossible Highforwardsurgecapability High-frequencyoperation PositivetemperaturecoefficientonVF RoHScompliant Halogen-free APPLICATIONS Generalpurpose

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

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